| PART |
Description |
Maker |
| TISPPBL3 TISPPBL3D TISPPBL3D-S TISPPBL3DR |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) TELECOM, SURGE PROTECTION CIRCUIT, PDSO8
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) 双远期导电的P -门晶闸管爱立信微电子用户线接口电路电路（SLIC
|
Bourns Inc.
Bourns, Inc.
|
| TISP61089QB TISP61089QBDR-S TISP61089QB12 |
PROGRAMMABLE OVERVOLTAGE PROTECTOR QUAD FORWARD-CONDUCTING P-GATE THYRISTOR
|
Bourns Electronic Solutions
|
| TISP61511DR TISP61511D TISP61511D-S TISP61511DR-S |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Bourns Electronic Solutions
|
| TISP5XXXH3BJ TISP5095H3BJ TISP5095H3BJR-S TISP5080 |
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS 95 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS 80 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA
|
Bourns Inc.
Bourns, Inc.
|
| TISP61089AS |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS 双远期导电的P -可编程门晶闸管过压保
|
Power Innovations International, Inc.
Power Innovations Limited
Power Innovations Ltd
|
| TISPPBL3D TISPPBL3DR-S TISPPBL3DR TISPPBL3 TISPPBL |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC)
|
BOURNS[Bourns Electronic Solutions]
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LS33401111 LY3340-M LG3340 LG3340-KN LG3340-L LG33 |
T1(3mm) LED LAMP T1毫米）发光二极管
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 251UL80S20 251UL 251UL100S10 251UL100S15 251UL100S |
2000V Fast Recovery Diode in a DO-205AB (DO-9) package 2000V快恢复二极管中的DO - 205AB（请 9）封
1600V Fast Recovery Diode in a DO-205AB (DO-9) package 1600V快恢复二极管中的DO - 205AB（请 9）封
2500V Fast Recovery Diode in a DO-205AB (DO-9) package
1000V Fast Recovery Diode in a DO-205AB (DO-9) package
1200V Fast Recovery Diode in a DO-205AB (DO-9) package
1800V Fast Recovery Diode in a DO-205AB (DO-9) package
1400V Fast Recovery Diode in a DO-205AB (DO-9) package
250 AMP Fast Recovery Power Silicon Rectifiers
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 250安培快速恢复电力硅整流
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 250安培快速恢复电力硅整流
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 250安培快速恢复电力硅整流
|
OlympicControls, Corp.
Cree, Inc.
IRF[International Rectifier]
http://
International Rectifier, Corp.
|
| IHY20N120R3 IHY15N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
